FCP600N60Z, FCPF600N60Z دیتاشیت

FCP600N60Z, FCPF600N60Z

مشخصات دیتاشیت

نام دیتاشیت FCP600N60Z, FCPF600N60Z
حجم فایل 830.09 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت FCP600N60Z, FCPF600N60Z

دانلود دیتاشیت

سایر مستندات

FCPF600N60Z 11 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCPF600N60Z
  • Power Dissipation (Pd): 89W
  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 7.4A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 600mΩ@10V,3.7A
  • Package: TO-220FPAB-3
  • Manufacturer: onsemi
  • Series: SuperFET® II
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: FCPF600
  • detail: N-Channel 600V 7.4A (Tc) 89W (Tc) Through Hole TO-220F

محصولات مشابه